IXYS Type N-Channel MOSFET, 30 A, 500 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 920-0965
- Tillv. art.nr:
- IXFH30N50Q3
- Tillverkare / varumärke:
- IXYS
Antal (1 rör med 30 enheter)*
3 142,98 kr
(exkl. moms)
3 928,74 kr
(inkl. moms)
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- 240 enhet(er) levereras från den 19 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 + | 104,766 kr | 3 142,98 kr |
*vägledande pris
- RS-artikelnummer:
- 920-0965
- Tillv. art.nr:
- IXFH30N50Q3
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 690W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 16.26mm | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 690W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 16.26mm | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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