IXYS Type N-Channel MOSFET, 60 A, 500 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 168-4730
- Tillv. art.nr:
- IXFH60N50P3
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
2 350,65 kr
(exkl. moms)
2 938,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 30 enhet(er) levereras från den 20 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 78,355 kr | 2 350,65 kr |
| 60 - 120 | 74,439 kr | 2 233,17 kr |
| 150 + | 70,519 kr | 2 115,57 kr |
*vägledande pris
- RS-artikelnummer:
- 168-4730
- Tillv. art.nr:
- IXFH60N50P3
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Typical Gate Charge Qg @ Vgs | 96nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1.04kW | ||
Typical Gate Charge Qg @ Vgs 96nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH60N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH16N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH26N50P