IXYS X2-Class N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

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RS-artikelnummer:
917-1457
Tillv. art.nr:
IXTH12N65X2
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Series

X2-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

17.7 nC @ 10 V

Width

21.45mm

Maximum Operating Temperature

+150 °C

Length

16.24mm

Transistor Material

Si

Height

5.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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