IXYS X2-Class Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- RS-artikelnummer:
- 917-1410
- Distrelec artikelnummer:
- 302-53-424
- Tillv. art.nr:
- IXTH48N65X2
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
109,42 kr
(exkl. moms)
136,78 kr
(inkl. moms)
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- Dessutom levereras 59 enhet(er) från den 30 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 109,42 kr |
| 5 - 9 | 100,91 kr |
| 10 - 59 | 95,87 kr |
| 60 - 179 | 87,47 kr |
| 180 + | 79,30 kr |
*vägledande pris
- RS-artikelnummer:
- 917-1410
- Distrelec artikelnummer:
- 302-53-424
- Tillv. art.nr:
- IXTH48N65X2
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 660W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Width | 21.34 mm | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30253424 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 660W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Width 21.34 mm | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30253424 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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