IXYS X2-Class Type N-Channel MOSFET, 48 A, 650 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 168-4810
- Tillv. art.nr:
- IXTH48N65X2
- Tillverkare / varumärke:
- IXYS
Antal (1 rör med 30 enheter)*
2 071,23 kr
(exkl. moms)
2 589,03 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 30 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 + | 69,041 kr | 2 071,23 kr |
*vägledande pris
- RS-artikelnummer:
- 168-4810
- Tillv. art.nr:
- IXTH48N65X2
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 660W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.34 mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 660W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 21.34 mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH12N65X2