Infineon HEXFET Type N-Channel MOSFET, 106 A, 75 V Enhancement, 3-Pin TO-263 IRF3808STRLPBF
- RS-artikelnummer:
- 915-4941
- Tillv. art.nr:
- IRF3808STRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
141,89 kr
(exkl. moms)
177,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 380 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 28,378 kr | 141,89 kr |
| 25 - 45 | 26,948 kr | 134,74 kr |
| 50 - 120 | 25,828 kr | 129,14 kr |
| 125 - 245 | 24,102 kr | 120,51 kr |
| 250 + | 22,714 kr | 113,57 kr |
*vägledande pris
- RS-artikelnummer:
- 915-4941
- Tillv. art.nr:
- IRF3808STRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 11.3 mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 11.3 mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel Power MOSFET 75 V Enhancement, 3-Pin TO-263 IRF2807ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF