Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 913-3865
- Tillv. art.nr:
- IRFP2907PBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 25 enheter)*
1 078,675 kr
(exkl. moms)
1 348,35 kr
(inkl. moms)
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- 1 925 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 25 - 25 | 43,147 kr | 1 078,68 kr |
| 50 - 100 | 40,988 kr | 1 024,70 kr |
| 125 + | 39,263 kr | 981,58 kr |
*vägledande pris
- RS-artikelnummer:
- 913-3865
- Tillv. art.nr:
- IRFP2907PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 209A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 410nC | |
| Maximum Power Dissipation Pd | 470W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 5.3 mm | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 209A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 410nC | ||
Maximum Power Dissipation Pd 470W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 5.3 mm | ||
Height 20.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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