Infineon CoolMOS C3 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 911-4849
- Tillv. art.nr:
- SPW47N60C3FKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
4 045,44 kr
(exkl. moms)
5 056,80 kr
(inkl. moms)
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I lager
- 330 enhet(er) är redo att levereras
- Dessutom levereras 60 enhet(er) från den 02 januari 2026
- Dessutom levereras 240 enhet(er) från den 28 maj 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 134,848 kr | 4 045,44 kr |
| 60 - 60 | 128,106 kr | 3 843,18 kr |
| 90 + | 120,015 kr | 3 600,45 kr |
*vägledande pris
- RS-artikelnummer:
- 911-4849
- Tillv. art.nr:
- SPW47N60C3FKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS C3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 415W | |
| Typical Gate Charge Qg @ Vgs | 252nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 5.3 mm | |
| Height | 20.95mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS C3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 415W | ||
Typical Gate Charge Qg @ Vgs 252nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 5.3 mm | ||
Height 20.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon CoolMOS™ C3 Series MOSFET, 47A Maximum Continuous Drain Current, 415W Maximum Power Dissipation - SPW47N60C3FKSA1
This high-voltage MOSFET is designed for power electronics applications. With its N-channel configuration, it offers consistent performance in various settings. Capable of handling a continuous drain current of 47A, it serves multiple industrial and automation purposes, ensuring reliability and effectiveness in switching tasks.
Features & Benefits
• High performance with a maximum voltage rating of 650V
• Low maximum drain-source resistance of 70mΩ enhances energy efficiency
• Robust power dissipation capability of 415W supports intensive applications
• Channels configured for enhancement mode allow for improved control
• Designed for through-hole mounting for straightforward integration
Applications
• Suitable for energy conversion in renewable energy
• Employed in motor drive circuits for enhanced efficiency
• Used in power management systems for increased stability
What is the optimal temperature range for operating this device?
The device operates efficiently between -55°C and +150°C, enhancing its reliability across varied environments.
How can it integrate into existing electrical systems?
This MOSFET is designed for through-hole mounting, making it compatible with standard PCB layouts for easy integration.
What are the safety considerations when using this component?
It is crucial to ensure the gate-source voltage remains within -20V to +20V to prevent damage during operation and maintain system stability.
What kind of applications require such high power capabilities?
Applications requiring significant power handling, such as motor controls, renewable energy systems, and industrial automation, benefit from its robust power ratings.
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