Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

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25 000,00 kr

(exkl. moms)

31 250,00 kr

(inkl. moms)

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RS-artikelnummer:
911-0890
Tillv. art.nr:
IPB027N10N3GATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

155nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Length

10.31mm

Width

9.45 mm

Height

4.57mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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