Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SiHF30N60E-GE3
- RS-artikelnummer:
- 903-4490
- Tillv. art.nr:
- SiHF30N60E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
137,09 kr
(exkl. moms)
171,362 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Slutlig(a) 850 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 68,545 kr | 137,09 kr |
| 20 - 48 | 64,455 kr | 128,91 kr |
| 50 - 98 | 61,71 kr | 123,42 kr |
| 100 - 198 | 54,88 kr | 109,76 kr |
| 200 + | 51,41 kr | 102,82 kr |
*vägledande pris
- RS-artikelnummer:
- 903-4490
- Tillv. art.nr:
- SiHF30N60E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Length | 10.63mm | |
| Height | 16.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Length 10.63mm | ||
Height 16.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay SiHA105N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA105N60EF-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG30N60E-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3
- Vishay SiHA105N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-220 SIHP065N60E-GE3