Infineon CoolMOS C6 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C6XKSA1
- RS-artikelnummer:
- 898-6895
- Tillv. art.nr:
- IPP60R099C6XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
139,82 kr
(exkl. moms)
174,78 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 390 enhet(er) från den 29 december 2025
- Dessutom levereras 504 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 69,91 kr | 139,82 kr |
| 10 - 18 | 62,215 kr | 124,43 kr |
| 20 - 48 | 58,015 kr | 116,03 kr |
| 50 - 98 | 54,60 kr | 109,20 kr |
| 100 + | 50,345 kr | 100,69 kr |
*vägledande pris
- RS-artikelnummer:
- 898-6895
- Tillv. art.nr:
- IPP60R099C6XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 119nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.65mm | |
| Height | 16.15mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 119nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 10.65mm | ||
Height 16.15mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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