Toshiba TK Type N-Channel MOSFET, 72 A, 120 V Enhancement, 3-Pin TO-220 TK72E12N1,S1X(S
- RS-artikelnummer:
- 896-2436
- Tillv. art.nr:
- TK72E12N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
84,00 kr
(exkl. moms)
105,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 16,80 kr | 84,00 kr |
| 25 - 45 | 14,784 kr | 73,92 kr |
| 50 - 95 | 12,924 kr | 64,62 kr |
| 100 - 245 | 12,074 kr | 60,37 kr |
| 250 + | 11,424 kr | 57,12 kr |
*vägledande pris
- RS-artikelnummer:
- 896-2436
- Tillv. art.nr:
- TK72E12N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 225W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.16mm | |
| Width | 4.45 mm | |
| Standards/Approvals | No | |
| Height | 15.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 225W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.16mm | ||
Width 4.45 mm | ||
Standards/Approvals No | ||
Height 15.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
relaterade länkar
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 100 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 80 V EnhancementS4X(S
