Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF

RS-artikelnummer:: 831-2853
Tillv. art.nr:: IRF640NSTRLPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK IRF640NSTRLPBF

Mängdrabatt möjlig

Price Var (i ett paket med 10)**

12,997 kr

(exkl. moms)

16,246 kr

(inkl. moms)

130 I lager för avsändande samma dag*

* Leveransdatumen kan ändras beroende på vald kvantitet och leveransadress.

FRI frakt på alla onlineordrar över 500,00 kr

Finns det i lager?

Enheter	Per enhet	Per förpackning**
10 - 40	12,997 kr	129,97 kr
50 - 90	12,354 kr	123,54 kr
100 - 240	11,822 kr	118,22 kr
250 - 490	11,046 kr	110,46 kr
500 +	10,391 kr	103,91 kr

**vägledande pris

RS-artikelnummer:: 831-2853
Tillv. art.nr:: IRF640NSTRLPBF
Tillverkare / varumärke:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF

This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.

Features & Benefits

• N-channel configuration supports enhancement mode operation
• Maximum continuous drain current of 18A
• Peak drain-source voltage of 200V for diverse applications
• D2PAK package designed for surface mount convenience
• Low Rds(on) of 150mΩ reduces energy loss during operation
• High maximum operating temperature of +175°C for various environments

Applications

• Power management in automotive electronics
• Industrial power supplies for automation systems
• Motor control across different sectors
• Renewable energy systems for energy conversion
• High-frequency power inverter designs

What is the maximum drain-source voltage?

The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.

How is heat dissipation managed during operation?

This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.

What are the implications of the gate threshold voltage range?

With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.

Can this component be used in parallel configurations?

Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	10.67mm
Width	9.65mm
Typical Gate Charge @ Vgs	67 nC @ 10 V
Number of Elements per Chip	1
Height	4.83mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C