Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF

RS-artikelnummer:: 130-1000
Distrelec artikelnummer:: 304-36-991
Tillv. art.nr:: IRFS4020TRLPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF

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102,44 kr

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128,05 kr

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Enheter	Per enhet	Per förpackning*
5 - 45	20,488 kr	102,44 kr
50 - 120	19,556 kr	97,78 kr
125 - 245	19,108 kr	95,54 kr
250 - 495	18,592 kr	92,96 kr
500 +	18,122 kr	90,61 kr

*vägledande pris

RS-artikelnummer:: 130-1000
Distrelec artikelnummer:: 304-36-991
Tillv. art.nr:: IRFS4020TRLPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	9.65mm
	Standards/Approvals	No
	Width	4.83 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 9.65mm
	Standards/Approvals No
	Width 4.83 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF

This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.

Features & Benefits

• Designed for high-efficiency Class-D audio amplification

• Low Rds(on) improves overall efficiency

• Operating junction temperature up to 175°C ensures robustness

• Repetitive avalanche capability safeguards against voltage spikes

Applications

• Utilised in Class-D audio amplifiers for improved sound quality

• Ideal for high current power supply

• Suitable for consumer and professional audio equipment

• Employed in high-performance automotive audio systems

What is the maximum continuous drain current?

The device can handle a maximum continuous drain current of 18A at 25°C.

Can this device operate at high temperatures?

Yes, it is designed to function effectively at temperatures as high as 175°C.

What configurations can it be used in?

It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.

How does low gate charge impact performance?

The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.

Is it compatible with surface mount technology?

Yes, this device is packaged in a D2PAK form factor, which is Ideal for surface mount applications.