Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

RS-artikelnummer:: 826-9092
Tillv. art.nr:: IPB120P04P4L03ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

333,87 kr

(exkl. moms)

417,34 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 3 790 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
10 - 10	33,387 kr	333,87 kr
20 - 40	31,718 kr	317,18 kr
50 - 90	30,386 kr	303,86 kr
100 - 240	29,042 kr	290,42 kr
250 +	27,048 kr	270,48 kr

*vägledande pris

RS-artikelnummer:: 826-9092
Tillv. art.nr:: IPB120P04P4L03ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type P
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS P
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	180nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Height	4.4mm
	Width	9.25 mm
	Length	10mm
	Automotive Standard	AEC-Q

	Välj alla
	Brand Infineon
	Channel Type Type P
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS P
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 180nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Height 4.4mm
	Width 9.25 mm
	Length 10mm
	Automotive Standard AEC-Q

RoHS-status: Inte relevant

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1

GRATIS leverans för online beställningar över 500,00 kr

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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