DiodesZetex DMN3051L Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 DMN3051L-7
- RS-artikelnummer:
- 822-2573
- Tillv. art.nr:
- DMN3051L-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
176,60 kr
(exkl. moms)
220,75 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 13 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 550 | 3,532 kr | 176,60 kr |
| 600 - 1450 | 2,124 kr | 106,20 kr |
| 1500 + | 1,693 kr | 84,65 kr |
*vägledande pris
- RS-artikelnummer:
- 822-2573
- Tillv. art.nr:
- DMN3051L-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN3051L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN3051L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.16V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
relaterade länkar
- DiodesZetex DMN3051L Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMN3404L-7
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 IRFML8244TRPBF
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
- DiodesZetex DMN65D8L Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23