Vishay IRF9640S Type P-Channel MOSFET, 6.8 A, 200 V Enhancement, 3-Pin TO-263 IRF9640STRLPBF
- RS-artikelnummer:
- 815-2667
- Tillv. art.nr:
- IRF9640STRLPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
239,46 kr
(exkl. moms)
299,32 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 800 enhet(er) levereras från den 29 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 10 | 23,946 kr | 239,46 kr |
| 20 - 40 | 22,523 kr | 225,23 kr |
| 50 - 90 | 20,362 kr | 203,62 kr |
| 100 - 240 | 19,163 kr | 191,63 kr |
| 250 + | 17,965 kr | 179,65 kr |
*vägledande pris
- RS-artikelnummer:
- 815-2667
- Tillv. art.nr:
- IRF9640STRLPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | IRF9640S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | -5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series IRF9640S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf -5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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