onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 166-2528
- Tillv. art.nr:
- FQB12P20TM
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 800 enheter)*
7 827,20 kr
(exkl. moms)
9 784,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 23 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 + | 9,784 kr | 7 827,20 kr |
*vägledande pris
- RS-artikelnummer:
- 166-2528
- Tillv. art.nr:
- FQB12P20TM
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 470mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 3.13W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | -5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 470mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 3.13W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf -5V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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