Vishay IRF9630S Type P-Channel MOSFET, 6.5 A, 200 V Enhancement, 3-Pin TO-263 IRF9630SPBF
- RS-artikelnummer:
- 650-4249
- Tillv. art.nr:
- IRF9630SPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
143,14 kr
(exkl. moms)
178,925 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 16 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 28,628 kr | 143,14 kr |
| 50 - 120 | 26,902 kr | 134,51 kr |
| 125 - 245 | 25,804 kr | 129,02 kr |
| 250 - 495 | 22,892 kr | 114,46 kr |
| 500 + | 21,482 kr | 107,41 kr |
*vägledande pris
- RS-artikelnummer:
- 650-4249
- Tillv. art.nr:
- IRF9630SPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | IRF9630S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -6.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.02 mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series IRF9630S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -6.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.02 mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay IRF9630S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay IRF9640S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay IRF9630 Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay SiHF9620S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay SiHF9630S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 FQB12P20TM
- Vishay IRF9640S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRF9640STRLPBF