Vishay SiHF9540S Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-263 SIHF9540STRL-GE3
- RS-artikelnummer:
- 815-2651
- Tillv. art.nr:
- SIHF9540STRL-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
254,02 kr
(exkl. moms)
317,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 21 september 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 25,402 kr | 254,02 kr |
| 50 - 90 | 23,901 kr | 239,01 kr |
| 100 - 240 | 21,616 kr | 216,16 kr |
| 250 - 490 | 20,317 kr | 203,17 kr |
| 500 + | 19,062 kr | 190,62 kr |
*vägledande pris
- RS-artikelnummer:
- 815-2651
- Tillv. art.nr:
- SIHF9540STRL-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | SiHF9540S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series SiHF9540S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay SiHF9540S Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay SiHF9630S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SIHF9630STRL-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 SUM60061EL-GE3
- Vishay SiHF9Z14S Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SIHF9Z14S-GE3
- Vishay SiHF9620S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SIHF9620S-GE3
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263