Vishay SiHF9630S Type P-Channel MOSFET, 4 A, 200 V Enhancement, 3-Pin TO-263 SIHF9630STRL-GE3
- RS-artikelnummer:
- 815-2663
- Tillv. art.nr:
- SIHF9630STRL-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
124,99 kr
(exkl. moms)
156,24 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 16 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 12,499 kr | 124,99 kr |
| 100 - 240 | 11,771 kr | 117,71 kr |
| 250 - 490 | 10,629 kr | 106,29 kr |
| 500 - 990 | 10,002 kr | 100,02 kr |
| 1000 + | 9,363 kr | 93,63 kr |
*vägledande pris
- RS-artikelnummer:
- 815-2663
- Tillv. art.nr:
- SIHF9630STRL-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SiHF9630S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -6.5V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SiHF9630S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -6.5V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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