Vishay Si1077X Type P-Channel MOSFET, 760 mA, 30 V Enhancement, 6-Pin SC-89 SI1077X-T1-GE3
- RS-artikelnummer:
- 812-3050
- Tillv. art.nr:
- SI1077X-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 20 enheter)*
65,08 kr
(exkl. moms)
81,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 1 660 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 20 - 180 | 3,254 kr | 65,08 kr |
| 200 - 980 | 3,058 kr | 61,16 kr |
| 1000 - 1980 | 2,761 kr | 55,22 kr |
| 2000 - 4980 | 2,599 kr | 51,98 kr |
| 5000 + | 2,447 kr | 48,94 kr |
*vägledande pris
- RS-artikelnummer:
- 812-3050
- Tillv. art.nr:
- SI1077X-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si1077X | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 244mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 236mW | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.6mm | |
| Width | 1.2 mm | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si1077X | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 244mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 236mW | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.6mm | ||
Width 1.2 mm | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay Si1077X Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-89
- Vishay Dual P-Channel MOSFET 60 V, 6-Pin SC-89-6 SI1025X-T1-GE3
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-89
- Vishay Isolated TrenchFET 2 Type P 300 mA 6-Pin SC-89-6 SI1029X-T1-GE3
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-89 NTE4151PT1G
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3
- Vishay P-Channel MOSFET 20 V SC-75A SI1031R-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
