onsemi 2N7002KW Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002KW
- RS-artikelnummer:
- 805-1135
- Tillv. art.nr:
- 2N7002KW
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 100 enheter)*
119,10 kr
(exkl. moms)
148,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 300 enhet(er) är redo att levereras
- Dessutom levereras 2 300 enhet(er) från den 14 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 100 - 400 | 1,191 kr | 119,10 kr |
| 500 - 900 | 1,027 kr | 102,70 kr |
| 1000 + | 0,889 kr | 88,90 kr |
*vägledande pris
- RS-artikelnummer:
- 805-1135
- Tillv. art.nr:
- 2N7002KW
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002KW | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002KW | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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