Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3
- RS-artikelnummer:
- 787-9024
- Tillv. art.nr:
- SI1032R-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 20 enheter)*
69,00 kr
(exkl. moms)
86,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 28 600 enhet(er), redo att levereras
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 20 - 180 | 3,45 kr | 69,00 kr |
| 200 - 480 | 2,582 kr | 51,64 kr |
| 500 - 980 | 2,24 kr | 44,80 kr |
| 1000 - 1980 | 1,893 kr | 37,86 kr |
| 2000 + | 1,719 kr | 34,38 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9024
- Tillv. art.nr:
- SI1032R-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-75 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 340mW | |
| Maximum Gate Source Voltage Vgs | ±6 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 1.68mm | |
| Width | 0.86 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-75 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 340mW | ||
Maximum Gate Source Voltage Vgs ±6 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 1.68mm | ||
Width 0.86 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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