Vishay Si1012CR Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3
- RS-artikelnummer:
- 787-9005
- Tillv. art.nr:
- SI1012CR-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 20 enheter)*
33,82 kr
(exkl. moms)
42,28 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 april 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 20 - 180 | 1,691 kr | 33,82 kr |
| 200 - 480 | 1,176 kr | 23,52 kr |
| 500 - 980 | 1,047 kr | 20,94 kr |
| 1000 - 1980 | 0,913 kr | 18,26 kr |
| 2000 + | 0,896 kr | 17,92 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9005
- Tillv. art.nr:
- SI1012CR-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si1012CR | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240mW | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Width | 0.86 mm | |
| Standards/Approvals | No | |
| Length | 1.68mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si1012CR | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240mW | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Width 0.86 mm | ||
Standards/Approvals No | ||
Length 1.68mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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