onsemi BSS138K Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138K
- RS-artikelnummer:
- 761-4401
- Distrelec artikelnummer:
- 304-45-643
- Tillv. art.nr:
- BSS138K
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
90,10 kr
(exkl. moms)
112,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 200 enhet(er) är redo att levereras
- Dessutom levereras 10 100 enhet(er) från den 26 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 400 | 0,901 kr | 90,10 kr |
| 500 - 900 | 0,777 kr | 77,70 kr |
| 1000 + | 0,673 kr | 67,30 kr |
*vägledande pris
- RS-artikelnummer:
- 761-4401
- Distrelec artikelnummer:
- 304-45-643
- Tillv. art.nr:
- BSS138K
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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