onsemi BSS138 Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 124-1694
- Tillv. art.nr:
- BSS138
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
1 329,00 kr
(exkl. moms)
1 662,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- Dessutom levereras 3 000 enhet(er) från den 19 januari 2026
- Dessutom levereras 150 000 enhet(er) från den 26 januari 2026
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 12000 | 0,443 kr | 1 329,00 kr |
| 15000 + | 0,432 kr | 1 296,00 kr |
*vägledande pris
- RS-artikelnummer:
- 124-1694
- Tillv. art.nr:
- BSS138
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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