onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 124-1692
- Tillv. art.nr:
- 2N7002
- Tillverkare / varumärke:
- onsemi
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Antal (1 rulle med 3000 enheter)*
3 654,00 kr
(exkl. moms)
4 566,00 kr
(inkl. moms)
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- 3 000 enhet(er) levereras från den 29 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 6000 | 1,218 kr | 3 654,00 kr |
| 9000 - 12000 | 1,185 kr | 3 555,00 kr |
| 15000 - 27000 | 1,154 kr | 3 462,00 kr |
| 30000 - 57000 | 1,124 kr | 3 372,00 kr |
| 60000 + | 1,096 kr | 3 288,00 kr |
*vägledande pris
- RS-artikelnummer:
- 124-1692
- Tillv. art.nr:
- 2N7002
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 223nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 223nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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