STMicroelectronics Type N-Channel MOSFET, 5.2 A, 800 V Enhancement, 3-Pin TO-263 STB7NK80ZT4
- RS-artikelnummer:
- 760-9516
- Tillv. art.nr:
- STB7NK80ZT4
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
159,26 kr
(exkl. moms)
199,075 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 50 enhet(er) från den 29 december 2025
- Dessutom levereras 285 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 31,852 kr | 159,26 kr |
| 10 - 95 | 26,992 kr | 134,96 kr |
| 100 - 495 | 21,146 kr | 105,73 kr |
| 500 - 995 | 17,964 kr | 89,82 kr |
| 1000 + | 14,806 kr | 74,03 kr |
*vägledande pris
- RS-artikelnummer:
- 760-9516
- Tillv. art.nr:
- STB7NK80ZT4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Length | 10.75mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Length 10.75mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
relaterade länkar
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP7NK80Z
- STMicroelectronics SuperMESH Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics SuperMESH Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220FP STP7NK80ZFP
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 STB18NM80
- STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET 800 V Enhancement, 3-Pin TO-263
