Infineon HEXFET Type P-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 IRLML2246TRPBF
- RS-artikelnummer:
- 760-4432
- Tillv. art.nr:
- IRLML2246TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
15,23 kr
(exkl. moms)
19,04 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 585 enhet(er) från den 29 december 2025
- Sista 113 440 enhet(er) levereras från den 05 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 3,046 kr | 15,23 kr |
| 50 - 245 | 2,902 kr | 14,51 kr |
| 250 - 495 | 2,778 kr | 13,89 kr |
| 500 - 1245 | 2,598 kr | 12,99 kr |
| 1250 + | 2,456 kr | 12,28 kr |
*vägledande pris
- RS-artikelnummer:
- 760-4432
- Tillv. art.nr:
- IRLML2246TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 236mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-315 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 236mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-315 | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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