Infineon HEXFET Type P-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rulle med 3000 enheter)*

1 872,00 kr

(exkl. moms)

2 340,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 111 000 enhet(er), redo att levereras
Enheter
Per enhet
Per rulle*
3000 - 30000,624 kr1 872,00 kr
6000 - 120000,592 kr1 776,00 kr
15000 +0,555 kr1 665,00 kr

*vägledande pris

RS-artikelnummer:
165-6614
Tillv. art.nr:
IRLML2246TRPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

236mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.9nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

1.3W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Width

1.4 mm

Standards/Approvals

No

Length

3.04mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
PH

P-Channel Power MOSFET 12V to 20V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

relaterade länkar