onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000TA
- RS-artikelnummer:
- 739-0224
- Tillv. art.nr:
- 2N7000TA
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
27,68 kr
(exkl. moms)
34,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 2,768 kr | 27,68 kr |
| 100 - 990 | 1,75 kr | 17,50 kr |
| 1000 - 2490 | 1,619 kr | 16,19 kr |
| 2500 - 9990 | 1,444 kr | 14,44 kr |
| 10000 + | 1,40 kr | 14,00 kr |
*vägledande pris
- RS-artikelnummer:
- 739-0224
- Tillv. art.nr:
- 2N7000TA
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Width | 4.19mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.2mm | |
| Number of Elements per Chip | 1 | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 4.19mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5.2mm | ||
Number of Elements per Chip 1 | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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