onsemi BS170 Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92 BS170
- RS-artikelnummer:
- 671-4736
- Distrelec artikelnummer:
- 304-43-724
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
33,38 kr
(exkl. moms)
41,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 880 enhet(er) är redo att levereras
- Plus 2 540 enhet(er) är redo att levereras från en annan plats
- Dessutom levereras 10 000 enhet(er) från den 11 mars 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 3,338 kr | 33,38 kr |
| 100 - 240 | 2,878 kr | 28,78 kr |
| 250 - 490 | 2,486 kr | 24,86 kr |
| 500 + | 2,195 kr | 21,95 kr |
*vägledande pris
- RS-artikelnummer:
- 671-4736
- Distrelec artikelnummer:
- 304-43-724
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | BS170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Maximum Power Dissipation Pd | 830mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Width | 4.19 mm | |
| Height | 5.33mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series BS170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Maximum Power Dissipation Pd 830mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Width 4.19 mm | ||
Height 5.33mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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