onsemi BS170 Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92 BS170
- RS-artikelnummer:
- 671-4736
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
33,38 kr
(exkl. moms)
41,72 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 620 enhet(er) från den 29 december 2025
- Dessutom levereras 1 910 enhet(er) från den 29 december 2025
- Dessutom levereras 400 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 3,338 kr | 33,38 kr |
| 100 - 240 | 2,878 kr | 28,78 kr |
| 250 - 490 | 2,486 kr | 24,86 kr |
| 500 + | 2,195 kr | 21,95 kr |
*vägledande pris
- RS-artikelnummer:
- 671-4736
- Tillv. art.nr:
- BS170
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BS170 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.6V | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Maximum Power Dissipation Pd | 830mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Standards/Approvals | No | |
| Width | 4.19 mm | |
| Distrelec Product Id | 304-43-724 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BS170 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.6V | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Maximum Power Dissipation Pd 830mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Height 5.33mm | ||
Standards/Approvals No | ||
Width 4.19 mm | ||
Distrelec Product Id 304-43-724 | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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