Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- RS-artikelnummer:
- 710-3386
- Tillv. art.nr:
- SI7309DN-T1-E3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
67,87 kr
(exkl. moms)
84,84 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 8 725 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 13,574 kr | 67,87 kr |
| 50 - 245 | 9,498 kr | 47,49 kr |
| 250 - 495 | 8,378 kr | 41,89 kr |
| 500 - 1245 | 7,078 kr | 35,39 kr |
| 1250 + | 6,406 kr | 32,03 kr |
*vägledande pris
- RS-artikelnummer:
- 710-3386
- Tillv. art.nr:
- SI7309DN-T1-E3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Series | Si7309DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Maximum Power Dissipation Pd | 19.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Length | 3.05mm | |
| Width | 3.05 mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Series Si7309DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Maximum Power Dissipation Pd 19.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Length 3.05mm | ||
Width 3.05 mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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