Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- RS-artikelnummer:
- 710-3263
- Tillv. art.nr:
- SI2325DS-T1-E3
- Tillverkare / varumärke:
- Vishay
Antal (1 förpackning med 5 enheter)*
57,52 kr
(exkl. moms)
71,90 kr
(inkl. moms)
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- Dessutom levereras 15 enhet(er) från den 29 december 2025
- Dessutom levereras 15 enhet(er) från den 29 december 2025
- Dessutom levereras 2 095 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 + | 11,504 kr | 57,52 kr |
*vägledande pris
- RS-artikelnummer:
- 710-3263
- Tillv. art.nr:
- SI2325DS-T1-E3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 530mA | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-23 | |
| Series | Si2325DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 750mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 530mA | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-23 | ||
Series Si2325DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 750mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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