Vishay TP0610K Type P-Channel MOSFET, 0.19 A, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- RS-artikelnummer:
- 152-6382
- Tillv. art.nr:
- TP0610K-T1-E3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
89,15 kr
(exkl. moms)
111,45 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 50 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 225 | 3,566 kr | 89,15 kr |
| 250 - 600 | 2,849 kr | 71,23 kr |
| 625 - 1225 | 2,132 kr | 53,30 kr |
| 1250 - 2475 | 1,783 kr | 44,58 kr |
| 2500 + | 1,595 kr | 39,88 kr |
*vägledande pris
- RS-artikelnummer:
- 152-6382
- Tillv. art.nr:
- TP0610K-T1-E3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.19A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.4V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.19A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.4V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- Vishay Si2325DS Type P-Channel MOSFET 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay Si2328DS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-E3
- Vishay P-Channel MOSFET Transistor 20 V, 3-Pin SOT-23 SI2301BDS-T1-E3
- Vishay Si2325DS Type P-Channel MOSFET 150 V Enhancement, 3-Pin SOT-23