Vishay IRF9Z34 Type P-Channel Power MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 708-4755
- Tillv. art.nr:
- IRF9Z34PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
107,97 kr
(exkl. moms)
134,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- 15 kvar, redo att levereras
- Sista 30 enhet(er) levereras från den 23 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 21,594 kr | 107,97 kr |
| 50 - 120 | 19,444 kr | 97,22 kr |
| 125 - 245 | 17,292 kr | 86,46 kr |
| 250 - 495 | 16,218 kr | 81,09 kr |
| 500 + | 15,098 kr | 75,49 kr |
*vägledande pris
- RS-artikelnummer:
- 708-4755
- Tillv. art.nr:
- IRF9Z34PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IRF9Z34 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.14Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -6.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IRF9Z34 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.14Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -6.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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