onsemi QFET Type P-Channel MOSFET, 19 A, 60 V Enhancement, 3-Pin TO-220

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768,30 kr

(exkl. moms)

960,40 kr

(inkl. moms)

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  • 950 enhet(er) levereras från den 04 februari 2026
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50 - 20015,366 kr768,30 kr
250 - 95013,14 kr657,00 kr
1000 - 245012,804 kr640,20 kr
2500 +12,477 kr623,85 kr

*vägledande pris

RS-artikelnummer:
124-1401
Tillv. art.nr:
FQPF27P06
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

60V

Series

QFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-4V

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

175°C

Height

16.3mm

Width

4.7 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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