Infineon Typ N Kanal, MOSFET, 343 A 40 V Förbättring, 3 Ben, TO-220, HEXFET

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RS-artikelnummer:
688-7204
Distrelec artikelnummer:
304-43-457
Tillv. art.nr:
IRLB3034PBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Kanaltyp

Typ N

Produkttyp

MOSFET

Maximal kontinuerlig dräneringsström Id

343A

Maximal källspänning för dränering Vds

40V

Kapseltyp

TO-220

Serie

HEXFET

Fästetyp

Genomgående hål

Antal ben

3

Maximal drain-källresistans Rds

2mΩ

Kanalläge

Förbättring

Maximal spänning för grindkälla Vgs

20 V

Maximal effektförlust Pd

375W

Minsta arbetsstemperatur

-55°C

Typisk grindladdning Qg @ Vgs

108nC

Framåtriktad spänning Vf

1.3V

Maximal arbetstemperatur

175°C

Standarder/godkännanden

No

Längd

10.67mm

Höjd

9.02mm

Bredd

4.83 mm

Fordonsstandard

Nej

Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF


This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.

Features & Benefits


• Capable of handling a maximum continuous drain current of 343A

• Optimised for logic level drive for simplified control

• Designed for high-speed power switching requirements

• Wide operating temperature range from -55°C to +175°C

• Superior gate threshold of 1V to 2.5V benefits low voltage operations

Applications


• Ideal for DC motor drive systems

• Utilised in high efficiency synchronous rectification setups

• Suitable for uninterruptible power supplies

• Effective in hard switched and high-frequency circuits

What are the maximum power dissipation capabilities of this component?


The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.

How does the low RDS(on) contribute to performance?


The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.

Can this MOSFET be used in automation systems?


Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.

What mounting options does this component offer?


It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.

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