Infineon HEXFET Type N-Channel Power MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF

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Förpackningsalternativ:
RS-artikelnummer:
688-7018
Distrelec artikelnummer:
302-84-053
Tillv. art.nr:
IRFP4568PBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

151nC

Maximum Power Dissipation Pd

684W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

20.7mm

Length

15.87mm

Width

5.31 mm

Automotive Standard

No

Distrelec Product Id

30284053

Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF


This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.

Features & Benefits


• Enhanced body diode recovery characteristics improve reliability

• Low on-resistance minimises power losses during operation

• Maximum power dissipation capability of 517 W accommodates high-demand application.

• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.

• Excellent gate threshold voltages optimise performance during switching actions.

• Single transistor configuration streamlines circuit designs for ease of use

Applications


• High-efficiency synchronous rectification

• Uninterruptible power supplies for dependable backup

• High-speed power switching circuits

• Suitable for hard-switched and high-frequency

What is the maximum continuous drain current this device can support?


The device supports a maximum continuous drain current of 171 A under optimal conditions.

How does the device manage heat during operation?


With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.

What are the typical gate charge requirements?


The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.

Can it withstand extreme temperature variations?


Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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