Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247 AUIRFP4568

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119,05 kr

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Förpackningsalternativ:
RS-artikelnummer:
222-4612
Tillv. art.nr:
AUIRFP4568
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

151nC

Maximum Power Dissipation Pd

517W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

20.7 mm

Height

5.31mm

Length

15.87mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

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