Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 222-4611
- Tillv. art.nr:
- AUIRFP4568
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 25 enheter)*
2 364,875 kr
(exkl. moms)
2 956,10 kr
(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 25 - 25 | 94,595 kr | 2 364,88 kr |
| 50 - 100 | 89,864 kr | 2 246,60 kr |
| 125 + | 86,083 kr | 2 152,08 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4611
- Tillv. art.nr:
- AUIRFP4568
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 517W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Width | 20.7 mm | |
| Height | 5.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 517W | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Width 20.7 mm | ||
Height 5.31mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
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