Infineon HEXFET Type N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220

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RS-artikelnummer:
688-6948
Distrelec artikelnummer:
302-84-037
Tillv. art.nr:
IRFB4228PBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

83A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

72nC

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

1.3mm

Width

4.82 mm

Height

8.77mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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