onsemi QFET Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 FQD17P06TM

RS-artikelnummer:: 671-0968
Tillv. art.nr:: FQD17P06TM
Tillverkare / varumärke:: onsemi

onsemi QFET Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 FQD17P06TM

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

68,32 kr

(exkl. moms)

85,40 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Försörjningsbrist

20 kvar, redo att levereras
Plus 10 enhet(er) är redo att levereras från en annan plats
Dessutom levereras 8 430 enhet(er) från den 05 januari 2026

Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.

Enheter	Per enhet	Per förpackning*
5 - 45	13,664 kr	68,32 kr
50 - 95	11,782 kr	58,91 kr
100 - 495	10,214 kr	51,07 kr
500 - 995	8,982 kr	44,91 kr
1000 +	8,176 kr	40,88 kr

*vägledande pris

RS-artikelnummer:: 671-0968
Tillv. art.nr:: FQD17P06TM
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	QFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	135mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-4V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Height	2.39mm
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Automotive Standard	No
	Distrelec Product Id	304-43-729

	Välj alla
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series QFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 135mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -4V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Height 2.39mm
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Automotive Standard No
	Distrelec Product Id 304-43-729

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.