Fairchild QFET N-Channel MOSFET Transistor, 7.8 A, 200 V, 3-Pin DPAK FQD10N20CTM

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RS-artikelnummer:
671-0936
Tillv. art.nr:
FQD10N20CTM
Tillverkare / varumärke:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

200 V

Series

QFET

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

6.1mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.6mm

Minimum Operating Temperature

-55 °C

Height

2.3mm

COO (Country of Origin):
CN

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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