N-Channel MOSFET Transistor, 10.2 A, 600 V, 3-Pin DPAK Fairchild FCD380N60E
- RS-artikelnummer:
- 774-1137P
- Tillv. art.nr:
- FCD380N60E
- Tillverkare / varumärke:
- Fairchild Semiconductor
Mängdrabatt möjlig
Antal 25 enheter (levereras på en kontinuerlig remsa)*
492,85 kr
(exkl. moms)
616,05 kr
(inkl. moms)
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet |
|---|---|
| 25 - 120 | 19,714 kr |
| 125 - 245 | 17,238 kr |
| 250 - 495 | 15,47 kr |
| 500 + | 14,144 kr |
*vägledande pris
- RS-artikelnummer:
- 774-1137P
- Tillv. art.nr:
- FCD380N60E
- Tillverkare / varumärke:
- Fairchild Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10.2 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 106 W | |
| Maximum Gate Source Voltage | +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 10.2 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 106 W | ||
Maximum Gate Source Voltage +30 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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