Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	21 A
	Maximum Drain Source Voltage	200 V
	Package Type	D2PAK (TO-263)
	Series	QFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	140 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	3.13 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.65mm
	Number of Elements per Chip	1
	Length	10.67mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	27 nC @ 5 V
	Maximum Operating Temperature	+150 °C
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Välj alla
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 21 A
	Maximum Drain Source Voltage 200 V
	Package Type D2PAK (TO-263)
	Series QFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 140 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 3.13 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.65mm
	Number of Elements per Chip 1
	Length 10.67mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 27 nC @ 5 V
	Maximum Operating Temperature +150 °C
	Height 4.83mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: MY

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi QFET N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK FQB19N20LTM

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor

relaterade länkar