onsemi PowerTrench Type P-Channel MOSFET, 10 A, 20 V Enhancement, 8-Pin SOIC FDS6575

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99,68 kr

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124,60 kr

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  • 105 enhet(er) levereras från den 05 januari 2026
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5 - 2019,936 kr99,68 kr
25 - 9512,924 kr64,62 kr
100 - 24512,724 kr63,62 kr
250 - 49512,588 kr62,94 kr
500 +11,804 kr59,02 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
671-0570
Tillv. art.nr:
FDS6575
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

74nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5mm

Width

4 mm

Height

1.5mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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