onsemi PowerTrench Type P-Channel MOSFET, 8 A, 20 V Enhancement, 8-Pin SOIC

Antal (1 rulle med 2500 enheter)*

7 822,50 kr

(exkl. moms)

9 777,50 kr

(inkl. moms)

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2500 +3,129 kr7 822,50 kr

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RS-artikelnummer:
166-2604
Tillv. art.nr:
FDS6375
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Width

4 mm

Length

5mm

Standards/Approvals

No

Height

1.5mm

Automotive Standard

No

COO (Country of Origin):
MY

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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