onsemi PowerTrench Type P-Channel MOSFET, 8.2 A, 40 V Enhancement, 8-Pin SOIC

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Antal (1 rulle med 2500 enheter)*

7 092,50 kr

(exkl. moms)

8 865,00 kr

(inkl. moms)

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  • Dessutom levereras 2 500 enhet(er) från den 29 december 2025
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2500 +2,837 kr7 092,50 kr

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RS-artikelnummer:
166-2594
Tillv. art.nr:
FDS4685
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.2A

Maximum Drain Source Voltage Vds

40V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

1.5mm

Standards/Approvals

No

Length

5mm

Width

4 mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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